Institute of High Pressure Physics

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License: CC BY - Creative Commons Attribution 4.0 Publication Date: 2024

1 to 10 of 24 Results

DatasetCopper doping effects on the superconducting properties of Sm-based oxypnictides Dec 27, 2024 Singh, Shiv, 2024, "Copper doping effects on the superconducting properties of Sm-based oxypnictides", https://doi.org/10.18150/EGG6QI, RepOD, V1
DatasetDFT Calculation Data on the Electronic Properties of As-covered GaN(0001) Surfaces Dec 18, 2024 Kempisty, Paweł, 2024, "DFT Calculation Data on the Electronic Properties of As-covered GaN(0001) Surfaces", https://doi.org/10.18150/7R3XKQ, RepOD, V1
DatasetSpecial role of indium nitride in the properties of related compounds and quantum structures Dec 10, 2024 Staszczak, Grzegorz, 2024, "Special role of indium nitride in the properties of related compounds and quantum structures", https://doi.org/10.18150/QIAQ3W, RepOD, V1
DatasetAC Electric Conductivity of High Pressure and High Temperature Formed NaFePO4 Glassy Nanocomposite Oct 31, 2024 Szpakiewicz-Szatan, Aleksander; Starzonek, Szymon; Garbarczyk, Jerzy Edward; Pietrzak, Tomasz Karol; Boćkowski, Michał; Rzoska, Sylwester Janusz, 2024, "AC Electric Conductivity of High Pressure and High Temperature Formed NaFePO4 Glassy Nanocomposite", https://doi.org/10.18150/Y0RGGK, RepOD, V1
DatasetFe(Se,Te) Thin Films Deposited through Pulsed Laser Ablation from Spark Plasma Sintered Targets Oct 17, 2024 Singh, Shiv, 2024, "Fe(Se,Te) Thin Films Deposited through Pulsed Laser Ablation from Spark Plasma Sintered Targets", https://doi.org/10.18150/AGOXPW, RepOD, V1
DatasetResearch data for "Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN" published in Acta Materialia vol 276, 120082 (2024) Oct 11, 2024 Smalc-Koziorowska, Julita, 2024, "Research data for "Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN" published in Acta Materialia vol 276, 120082 (2024)", https://doi.org/10.18150/ZYX2FD, RepOD, V1
DatasetPolarization - Doped InGaN LEDs and Laser Diodes for Broad Temperature Range Operation Sep 13, 2024 AKTAŞ, Muhammed; GRZANKA, Szymon; MARONA, Lucja; GOSS, Jakub; STASZCZAK, Grzegorz; KAFAR, Anna; PERLIN, Piotr, 2024, "Polarization - Doped InGaN LEDs and Laser Diodes for Broad Temperature Range Operation", https://doi.org/10.18150/H4KDNN, RepOD, V1
DatasetOn Morphology of Aluminum–Gallium Nitride Layers Grown by Halide Vapor Phase Epitaxy: The Role of Total Reactants’ Pressure and Ammonia Flow Rate Sep 6, 2024 Jaroszyńska, Arianna, 2024, "On Morphology of Aluminum–Gallium Nitride Layers Grown by Halide Vapor Phase Epitaxy: The Role of Total Reactants’ Pressure and Ammonia Flow Rate", https://doi.org/10.18150/WFFI5C, RepOD, V1
DatasetThe Dominance of Pretransitional Effects in Liquid Crystal-Based Nanocolloids: Nematogenic 4-methoxybenzylidene-4′–butylaniline with Transverse Permanent Dipole Moment and BaTiO3 Nanoparticles Jul 23, 2024 Łoś, Joanna; Drozd-Rzoska, Aleksandra; Rzoska, Sylwester Janusz, 2024, "The Dominance of Pretransitional Effects in Liquid Crystal-Based Nanocolloids: Nematogenic 4-methoxybenzylidene-4′–butylaniline with Transverse Permanent Dipole Moment and BaTiO3 Nanoparticles", https://doi.org/10.18150/ECLURN, RepOD, V1
DatasetGraphene Schottky barrier diode acting as a semi-transparent contact to n-GaN Jul 15, 2024 Kruszewski , Piotr; Sai, Pavlo; Krajewska, Aleksandra; Sakowski, Konrad; Ivonyak, Yurii; Jakieła, Rafał; Plesiewicz, Jerzy; Prystawko, Paweł, 2024, "Graphene Schottky barrier diode acting as a semi-transparent contact to n-GaN", https://doi.org/10.18150/XI2HKM, RepOD, V1

Copper doping effects on the superconducting properties of Sm-based oxypnictides

Dec 27, 2024

Singh, Shiv, 2024, "Copper doping effects on the superconducting properties of Sm-based oxypnictides", https://doi.org/10.18150/EGG6QI, RepOD, V1

DFT Calculation Data on the Electronic Properties of As-covered GaN(0001) Surfaces

Dec 18, 2024

Kempisty, Paweł, 2024, "DFT Calculation Data on the Electronic Properties of As-covered GaN(0001) Surfaces", https://doi.org/10.18150/7R3XKQ, RepOD, V1

Special role of indium nitride in the properties of related compounds and quantum structures

Dec 10, 2024

Staszczak, Grzegorz, 2024, "Special role of indium nitride in the properties of related compounds and quantum structures", https://doi.org/10.18150/QIAQ3W, RepOD, V1

AC Electric Conductivity of High Pressure and High Temperature Formed NaFePO4 Glassy Nanocomposite

Oct 31, 2024

Szpakiewicz-Szatan, Aleksander; Starzonek, Szymon; Garbarczyk, Jerzy Edward; Pietrzak, Tomasz Karol; Boćkowski, Michał; Rzoska, Sylwester Janusz, 2024, "AC Electric Conductivity of High Pressure and High Temperature Formed NaFePO4 Glassy Nanocomposite", https://doi.org/10.18150/Y0RGGK, RepOD, V1

Fe(Se,Te) Thin Films Deposited through Pulsed Laser Ablation from Spark Plasma Sintered Targets

Oct 17, 2024

Singh, Shiv, 2024, "Fe(Se,Te) Thin Films Deposited through Pulsed Laser Ablation from Spark Plasma Sintered Targets", https://doi.org/10.18150/AGOXPW, RepOD, V1

Research data for "Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN" published in Acta Materialia vol 276, 120082 (2024)

Oct 11, 2024

Smalc-Koziorowska, Julita, 2024, "Research data for "Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN" published in Acta Materialia vol 276, 120082 (2024)", https://doi.org/10.18150/ZYX2FD, RepOD, V1

Polarization - Doped InGaN LEDs and Laser Diodes for Broad Temperature Range Operation

Sep 13, 2024

AKTAŞ, Muhammed; GRZANKA, Szymon; MARONA, Lucja; GOSS, Jakub; STASZCZAK, Grzegorz; KAFAR, Anna; PERLIN, Piotr, 2024, "Polarization - Doped InGaN LEDs and Laser Diodes for Broad Temperature Range Operation", https://doi.org/10.18150/H4KDNN, RepOD, V1

Thumbnail of dataset On Morphology of Aluminum–Gallium Nitride Layers Grown by Halide Vapor Phase Epitaxy: The Role of Total Reactants’ Pressure and Ammonia Flow Rate

On Morphology of Aluminum–Gallium Nitride Layers Grown by Halide Vapor Phase Epitaxy: The Role of Total Reactants’ Pressure and Ammonia Flow Rate

Sep 6, 2024

Jaroszyńska, Arianna, 2024, "On Morphology of Aluminum–Gallium Nitride Layers Grown by Halide Vapor Phase Epitaxy: The Role of Total Reactants’ Pressure and Ammonia Flow Rate", https://doi.org/10.18150/WFFI5C, RepOD, V1

The Dominance of Pretransitional Effects in Liquid Crystal-Based Nanocolloids: Nematogenic 4-methoxybenzylidene-4′–butylaniline with Transverse Permanent Dipole Moment and BaTiO3 Nanoparticles

Jul 23, 2024

Łoś, Joanna; Drozd-Rzoska, Aleksandra; Rzoska, Sylwester Janusz, 2024, "The Dominance of Pretransitional Effects in Liquid Crystal-Based Nanocolloids: Nematogenic 4-methoxybenzylidene-4′–butylaniline with Transverse Permanent Dipole Moment and BaTiO3 Nanoparticles", https://doi.org/10.18150/ECLURN, RepOD, V1

Graphene Schottky barrier diode acting as a semi-transparent contact to n-GaN

Jul 15, 2024

Kruszewski , Piotr; Sai, Pavlo; Krajewska, Aleksandra; Sakowski, Konrad; Ivonyak, Yurii; Jakieła, Rafał; Plesiewicz, Jerzy; Prystawko, Paweł, 2024, "Graphene Schottky barrier diode acting as a semi-transparent contact to n-GaN", https://doi.org/10.18150/XI2HKM, RepOD, V1

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