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Institute of High Pressure Physics

(Polish Academy of Sciences)

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1 to 10 of 45 Results

DatasetPros and Cons of (NH4)2S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser Diode Nov 14, 2024 Levchenko, Iryna; Kryvyi, Serhii; Kamińska, Eliana; Smalc-Koziorowska, Julita; Grzanka, Szymon; Kacperski, Jacek; Nowak, Grzegorz; Kret, Sławomir; Marona, Łucja; Perlin, Piotr, 2024, "Pros and Cons of (NH4)2S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser Diode", https://doi.org/10.18150/L31LP7, RepOD, V1
DatasetPalladium-Based Contacts on p-GaN and Their Application in Laser Diodes Nov 14, 2024 Levchenko, Iryna; Kryvyi, Serhii; Kamińska, Eliana; Grzanka, Szymon; Grzanka, Ewa; Marona, Łucja; Perlin, Piotr, 2024, "Palladium-Based Contacts on p-GaN and Their Application in Laser Diodes", https://doi.org/10.18150/CEBLJL, RepOD, V1
DatasetAC Electric Conductivity of High Pressure and High Temperature Formed NaFePO4 Glassy Nanocomposite Oct 31, 2024 Szpakiewicz-Szatan, Aleksander; Starzonek, Szymon; Garbarczyk, Jerzy Edward; Pietrzak, Tomasz Karol; Boćkowski, Michał; Rzoska, Sylwester Janusz, 2024, "AC Electric Conductivity of High Pressure and High Temperature Formed NaFePO4 Glassy Nanocomposite", https://doi.org/10.18150/Y0RGGK, RepOD, V1
DatasetFe(Se,Te) Thin Films Deposited through Pulsed Laser Ablation from Spark Plasma Sintered Targets Oct 17, 2024 Singh, Shiv, 2024, "Fe(Se,Te) Thin Films Deposited through Pulsed Laser Ablation from Spark Plasma Sintered Targets", https://doi.org/10.18150/AGOXPW, RepOD, V1
DatasetResearch data for "Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN" published in Acta Materialia vol 276, 120082 (2024) Oct 11, 2024 Smalc-Koziorowska, Julita, 2024, "Research data for "Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN" published in Acta Materialia vol 276, 120082 (2024)", https://doi.org/10.18150/ZYX2FD, RepOD, V1
DatasetUsing both faces of polar semiconductor wafers for functional devices-data set Oct 11, 2024 Turski, Henryk, 2024, "Using both faces of polar semiconductor wafers for functional devices-data set", https://doi.org/10.18150/US6STK, RepOD, V1
DatasetPolarization - Doped InGaN LEDs and Laser Diodes for Broad Temperature Range Operation Sep 13, 2024 AKTAŞ, Muhammed; GRZANKA, Szymon; MARONA, Lucja; GOSS, Jakub; STASZCZAK, Grzegorz; KAFAR, Anna; PERLIN, Piotr, 2024, "Polarization - Doped InGaN LEDs and Laser Diodes for Broad Temperature Range Operation", https://doi.org/10.18150/H4KDNN, RepOD, V1
DatasetOn Morphology of Aluminum–Gallium Nitride Layers Grown by Halide Vapor Phase Epitaxy: The Role of Total Reactants’ Pressure and Ammonia Flow Rate Sep 6, 2024 Jaroszyńska, Arianna, 2024, "On Morphology of Aluminum–Gallium Nitride Layers Grown by Halide Vapor Phase Epitaxy: The Role of Total Reactants’ Pressure and Ammonia Flow Rate", https://doi.org/10.18150/WFFI5C, RepOD, V1
DatasetHigh-Pressure Synthesis and the Enhancement of the Superconducting Properties of FeSe0.5Te0.5 Aug 30, 2024 Singh, Shiv, 2023, "High-Pressure Synthesis and the Enhancement of the Superconducting Properties of FeSe0.5Te0.5", https://doi.org/10.18150/GNO78K, RepOD, V2
DatasetHigh Gas Pressure and High-Temperature Synthesis (HP-HTS) Technique and Its Impact on Iron-Based Superconductors Aug 30, 2024 Singh, Shiv, 2023, "High Gas Pressure and High-Temperature Synthesis (HP-HTS) Technique and Its Impact on Iron-Based Superconductors", https://doi.org/10.18150/ETBCVM, RepOD, V2

Pros and Cons of (NH4)2S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser Diode

Nov 14, 2024

Levchenko, Iryna; Kryvyi, Serhii; Kamińska, Eliana; Smalc-Koziorowska, Julita; Grzanka, Szymon; Kacperski, Jacek; Nowak, Grzegorz; Kret, Sławomir; Marona, Łucja; Perlin, Piotr, 2024, "Pros and Cons of (NH4)2S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser Diode", https://doi.org/10.18150/L31LP7, RepOD, V1

Palladium-Based Contacts on p-GaN and Their Application in Laser Diodes

Nov 14, 2024

Levchenko, Iryna; Kryvyi, Serhii; Kamińska, Eliana; Grzanka, Szymon; Grzanka, Ewa; Marona, Łucja; Perlin, Piotr, 2024, "Palladium-Based Contacts on p-GaN and Their Application in Laser Diodes", https://doi.org/10.18150/CEBLJL, RepOD, V1

AC Electric Conductivity of High Pressure and High Temperature Formed NaFePO4 Glassy Nanocomposite

Oct 31, 2024

Szpakiewicz-Szatan, Aleksander; Starzonek, Szymon; Garbarczyk, Jerzy Edward; Pietrzak, Tomasz Karol; Boćkowski, Michał; Rzoska, Sylwester Janusz, 2024, "AC Electric Conductivity of High Pressure and High Temperature Formed NaFePO4 Glassy Nanocomposite", https://doi.org/10.18150/Y0RGGK, RepOD, V1

Fe(Se,Te) Thin Films Deposited through Pulsed Laser Ablation from Spark Plasma Sintered Targets

Oct 17, 2024

Singh, Shiv, 2024, "Fe(Se,Te) Thin Films Deposited through Pulsed Laser Ablation from Spark Plasma Sintered Targets", https://doi.org/10.18150/AGOXPW, RepOD, V1

Research data for "Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN" published in Acta Materialia vol 276, 120082 (2024)

Oct 11, 2024

Smalc-Koziorowska, Julita, 2024, "Research data for "Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN" published in Acta Materialia vol 276, 120082 (2024)", https://doi.org/10.18150/ZYX2FD, RepOD, V1

Using both faces of polar semiconductor wafers for functional devices-data set

Oct 11, 2024

Turski, Henryk, 2024, "Using both faces of polar semiconductor wafers for functional devices-data set", https://doi.org/10.18150/US6STK, RepOD, V1

Polarization - Doped InGaN LEDs and Laser Diodes for Broad Temperature Range Operation

Sep 13, 2024

AKTAŞ, Muhammed; GRZANKA, Szymon; MARONA, Lucja; GOSS, Jakub; STASZCZAK, Grzegorz; KAFAR, Anna; PERLIN, Piotr, 2024, "Polarization - Doped InGaN LEDs and Laser Diodes for Broad Temperature Range Operation", https://doi.org/10.18150/H4KDNN, RepOD, V1

Thumbnail of dataset On Morphology of Aluminum–Gallium Nitride Layers Grown by Halide Vapor Phase Epitaxy: The Role of Total Reactants’ Pressure and Ammonia Flow Rate

On Morphology of Aluminum–Gallium Nitride Layers Grown by Halide Vapor Phase Epitaxy: The Role of Total Reactants’ Pressure and Ammonia Flow Rate

Sep 6, 2024

Jaroszyńska, Arianna, 2024, "On Morphology of Aluminum–Gallium Nitride Layers Grown by Halide Vapor Phase Epitaxy: The Role of Total Reactants’ Pressure and Ammonia Flow Rate", https://doi.org/10.18150/WFFI5C, RepOD, V1

High-Pressure Synthesis and the Enhancement of the Superconducting Properties of FeSe0.5Te0.5

Aug 30, 2024

Singh, Shiv, 2023, "High-Pressure Synthesis and the Enhancement of the Superconducting Properties of FeSe0.5Te0.5", https://doi.org/10.18150/GNO78K, RepOD, V2

High Gas Pressure and High-Temperature Synthesis (HP-HTS) Technique and Its Impact on Iron-Based Superconductors

Aug 30, 2024

Singh, Shiv, 2023, "High Gas Pressure and High-Temperature Synthesis (HP-HTS) Technique and Its Impact on Iron-Based Superconductors", https://doi.org/10.18150/ETBCVM, RepOD, V2