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Institute of High Pressure Physics

(Polish Academy of Sciences)

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1 to 10 of 49 Results

DatasetCopper doping effects on the superconducting properties of Sm-based oxypnictides Dec 27, 2024 Singh, Shiv, 2024, "Copper doping effects on the superconducting properties of Sm-based oxypnictides", https://doi.org/10.18150/EGG6QI, RepOD, V1
DatasetDFT Calculation Data on the Electronic Properties of As-covered GaN(0001) Surfaces Dec 18, 2024 Kempisty, Paweł, 2024, "DFT Calculation Data on the Electronic Properties of As-covered GaN(0001) Surfaces", https://doi.org/10.18150/7R3XKQ, RepOD, V1
DatasetSpecial role of indium nitride in the properties of related compounds and quantum structures Dec 10, 2024 Staszczak, Grzegorz, 2024, "Special role of indium nitride in the properties of related compounds and quantum structures", https://doi.org/10.18150/QIAQ3W, RepOD, V1
DatasetHydrostatic Pressure as a Tool for the Study of Semiconductor Properties—An Example of III–V Nitrides Dec 10, 2024 Staszczak, Grzegorz, 2024, "Hydrostatic Pressure as a Tool for the Study of Semiconductor Properties—An Example of III–V Nitrides", https://doi.org/10.18150/VKIQYI, RepOD, V1
DatasetPros and Cons of (NH4)2S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser Diode Nov 14, 2024 Levchenko, Iryna; Kryvyi, Serhii; Kamińska, Eliana; Smalc-Koziorowska, Julita; Grzanka, Szymon; Kacperski, Jacek; Nowak, Grzegorz; Kret, Sławomir; Marona, Łucja; Perlin, Piotr, 2024, "Pros and Cons of (NH4)2S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser Diode", https://doi.org/10.18150/L31LP7, RepOD, V1
DatasetPalladium-Based Contacts on p-GaN and Their Application in Laser Diodes Nov 14, 2024 Levchenko, Iryna; Kryvyi, Serhii; Kamińska, Eliana; Grzanka, Szymon; Grzanka, Ewa; Marona, Łucja; Perlin, Piotr, 2024, "Palladium-Based Contacts on p-GaN and Their Application in Laser Diodes", https://doi.org/10.18150/CEBLJL, RepOD, V1
DatasetAC Electric Conductivity of High Pressure and High Temperature Formed NaFePO4 Glassy Nanocomposite Oct 31, 2024 Szpakiewicz-Szatan, Aleksander; Starzonek, Szymon; Garbarczyk, Jerzy Edward; Pietrzak, Tomasz Karol; Boćkowski, Michał; Rzoska, Sylwester Janusz, 2024, "AC Electric Conductivity of High Pressure and High Temperature Formed NaFePO4 Glassy Nanocomposite", https://doi.org/10.18150/Y0RGGK, RepOD, V1
DatasetFe(Se,Te) Thin Films Deposited through Pulsed Laser Ablation from Spark Plasma Sintered Targets Oct 17, 2024 Singh, Shiv, 2024, "Fe(Se,Te) Thin Films Deposited through Pulsed Laser Ablation from Spark Plasma Sintered Targets", https://doi.org/10.18150/AGOXPW, RepOD, V1
DatasetResearch data for "Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN" published in Acta Materialia vol 276, 120082 (2024) Oct 11, 2024 Smalc-Koziorowska, Julita, 2024, "Research data for "Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN" published in Acta Materialia vol 276, 120082 (2024)", https://doi.org/10.18150/ZYX2FD, RepOD, V1
DatasetUsing both faces of polar semiconductor wafers for functional devices-data set Oct 11, 2024 Turski, Henryk, 2024, "Using both faces of polar semiconductor wafers for functional devices-data set", https://doi.org/10.18150/US6STK, RepOD, V1

Copper doping effects on the superconducting properties of Sm-based oxypnictides

Dec 27, 2024

Singh, Shiv, 2024, "Copper doping effects on the superconducting properties of Sm-based oxypnictides", https://doi.org/10.18150/EGG6QI, RepOD, V1

DFT Calculation Data on the Electronic Properties of As-covered GaN(0001) Surfaces

Dec 18, 2024

Kempisty, Paweł, 2024, "DFT Calculation Data on the Electronic Properties of As-covered GaN(0001) Surfaces", https://doi.org/10.18150/7R3XKQ, RepOD, V1

Special role of indium nitride in the properties of related compounds and quantum structures

Dec 10, 2024

Staszczak, Grzegorz, 2024, "Special role of indium nitride in the properties of related compounds and quantum structures", https://doi.org/10.18150/QIAQ3W, RepOD, V1

Hydrostatic Pressure as a Tool for the Study of Semiconductor Properties—An Example of III–V Nitrides

Dec 10, 2024

Staszczak, Grzegorz, 2024, "Hydrostatic Pressure as a Tool for the Study of Semiconductor Properties—An Example of III–V Nitrides", https://doi.org/10.18150/VKIQYI, RepOD, V1

Pros and Cons of (NH4)2S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser Diode

Nov 14, 2024

Levchenko, Iryna; Kryvyi, Serhii; Kamińska, Eliana; Smalc-Koziorowska, Julita; Grzanka, Szymon; Kacperski, Jacek; Nowak, Grzegorz; Kret, Sławomir; Marona, Łucja; Perlin, Piotr, 2024, "Pros and Cons of (NH4)2S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser Diode", https://doi.org/10.18150/L31LP7, RepOD, V1

Palladium-Based Contacts on p-GaN and Their Application in Laser Diodes

Nov 14, 2024

Levchenko, Iryna; Kryvyi, Serhii; Kamińska, Eliana; Grzanka, Szymon; Grzanka, Ewa; Marona, Łucja; Perlin, Piotr, 2024, "Palladium-Based Contacts on p-GaN and Their Application in Laser Diodes", https://doi.org/10.18150/CEBLJL, RepOD, V1

AC Electric Conductivity of High Pressure and High Temperature Formed NaFePO4 Glassy Nanocomposite

Oct 31, 2024

Szpakiewicz-Szatan, Aleksander; Starzonek, Szymon; Garbarczyk, Jerzy Edward; Pietrzak, Tomasz Karol; Boćkowski, Michał; Rzoska, Sylwester Janusz, 2024, "AC Electric Conductivity of High Pressure and High Temperature Formed NaFePO4 Glassy Nanocomposite", https://doi.org/10.18150/Y0RGGK, RepOD, V1

Fe(Se,Te) Thin Films Deposited through Pulsed Laser Ablation from Spark Plasma Sintered Targets

Oct 17, 2024

Singh, Shiv, 2024, "Fe(Se,Te) Thin Films Deposited through Pulsed Laser Ablation from Spark Plasma Sintered Targets", https://doi.org/10.18150/AGOXPW, RepOD, V1

Research data for "Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN" published in Acta Materialia vol 276, 120082 (2024)

Oct 11, 2024

Smalc-Koziorowska, Julita, 2024, "Research data for "Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN" published in Acta Materialia vol 276, 120082 (2024)", https://doi.org/10.18150/ZYX2FD, RepOD, V1

Using both faces of polar semiconductor wafers for functional devices-data set

Oct 11, 2024

Turski, Henryk, 2024, "Using both faces of polar semiconductor wafers for functional devices-data set", https://doi.org/10.18150/US6STK, RepOD, V1