Institute of High Pressure Physics

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1 to 10 of 95 Results

DatasetResonance shift in transmission from simulated data for various substrates and for various designs of THz metasurfaces Jun 11, 2026 Sakowicz, Maciej, 2026, "Resonance shift in transmission from simulated data for various substrates and for various designs of THz metasurfaces", https://doi.org/10.18150/FFA1ZY, RepOD, V1
DatasetExperimental data of transmission amplitude peak shift for TPX substrate and for Fano design of THz metasurface covered with BSA Jun 11, 2026 Sakowicz, Maciej, 2026, "Experimental data of transmission amplitude peak shift for TPX substrate and for Fano design of THz metasurface covered with BSA", https://doi.org/10.18150/CGFZWK, RepOD, V1
DatasetComparison of experimental data with various methods of simulation of transmission amplitude for two substrates: TPX and Si, for Fano design of THz metasurface Jun 11, 2026 Sakowicz, Maciej, 2026, "Comparison of experimental data with various methods of simulation of transmission amplitude for two substrates: TPX and Si, for Fano design of THz metasurface", https://doi.org/10.18150/8YZASJ, RepOD, V1
DatasetSimulation of transmission amplitude for various substrates and for various designs of THz metasurfaces Jun 11, 2026 Sakowicz, Maciej, 2026, "Simulation of transmission amplitude for various substrates and for various designs of THz metasurfaces", https://doi.org/10.18150/H27941, RepOD, V1
DatasetUltra-High-Pressure Annealing Data for Si/Mg/Mg+N-ion-implanted GaN for photoluminescence characterisation May 13, 2026 Boćkowski, Michał, 2026, "Ultra-High-Pressure Annealing Data for Si/Mg/Mg+N-ion-implanted GaN for photoluminescence characterisation", https://doi.org/10.18150/MBEOQH, RepOD, V1
DatasetUltra-High-Pressure Annealing Data for Mg-ion-implanted GaN with carbon capping May 13, 2026 Boćkowski, Michał, 2026, "Ultra-High-Pressure Annealing Data for Mg-ion-implanted GaN with carbon capping", https://doi.org/10.18150/RO6VRA, RepOD, V1
DatasetFirst-principles data for silicon diffusion in GaN May 13, 2026 Kawka, Karol, 2026, "First-principles data for silicon diffusion in GaN", https://doi.org/10.18150/KKUNGQ, RepOD, V2
DatasetResearch data for studies of edge relaxation of InGaN layers May 11, 2026 Smalc-Koziorowska, Julita, 2026, "Research data for studies of edge relaxation of InGaN layers", https://doi.org/10.18150/X3FXSH, RepOD, V1
DatasetEstimation of light extraction efficiency of LED devices May 4, 2026 Lach, Szymon, 2026, "Estimation of light extraction efficiency of LED devices", https://doi.org/10.18150/9PRICW, RepOD, V1
DatasetSn diffusion in GaN - DFT data Apr 30, 2026 Kawka, Karol, 2026, "Sn diffusion in GaN - DFT data", https://doi.org/10.18150/XLEBHV, RepOD, V1

Resonance shift in transmission from simulated data for various substrates and for various designs of THz metasurfaces

Jun 11, 2026

Sakowicz, Maciej, 2026, "Resonance shift in transmission from simulated data for various substrates and for various designs of THz metasurfaces", https://doi.org/10.18150/FFA1ZY, RepOD, V1

Experimental data of transmission amplitude peak shift for TPX substrate and for Fano design of THz metasurface covered with BSA

Jun 11, 2026

Sakowicz, Maciej, 2026, "Experimental data of transmission amplitude peak shift for TPX substrate and for Fano design of THz metasurface covered with BSA", https://doi.org/10.18150/CGFZWK, RepOD, V1

Comparison of experimental data with various methods of simulation of transmission amplitude for two substrates: TPX and Si, for Fano design of THz metasurface

Jun 11, 2026

Sakowicz, Maciej, 2026, "Comparison of experimental data with various methods of simulation of transmission amplitude for two substrates: TPX and Si, for Fano design of THz metasurface", https://doi.org/10.18150/8YZASJ, RepOD, V1

Simulation of transmission amplitude for various substrates and for various designs of THz metasurfaces

Jun 11, 2026

Sakowicz, Maciej, 2026, "Simulation of transmission amplitude for various substrates and for various designs of THz metasurfaces", https://doi.org/10.18150/H27941, RepOD, V1

Ultra-High-Pressure Annealing Data for Si/Mg/Mg+N-ion-implanted GaN for photoluminescence characterisation

May 13, 2026

Boćkowski, Michał, 2026, "Ultra-High-Pressure Annealing Data for Si/Mg/Mg+N-ion-implanted GaN for photoluminescence characterisation", https://doi.org/10.18150/MBEOQH, RepOD, V1

Ultra-High-Pressure Annealing Data for Mg-ion-implanted GaN with carbon capping

May 13, 2026

Boćkowski, Michał, 2026, "Ultra-High-Pressure Annealing Data for Mg-ion-implanted GaN with carbon capping", https://doi.org/10.18150/RO6VRA, RepOD, V1

First-principles data for silicon diffusion in GaN

May 13, 2026

Kawka, Karol, 2026, "First-principles data for silicon diffusion in GaN", https://doi.org/10.18150/KKUNGQ, RepOD, V2

Research data for studies of edge relaxation of InGaN layers

May 11, 2026

Smalc-Koziorowska, Julita, 2026, "Research data for studies of edge relaxation of InGaN layers", https://doi.org/10.18150/X3FXSH, RepOD, V1

Estimation of light extraction efficiency of LED devices

May 4, 2026

Lach, Szymon, 2026, "Estimation of light extraction efficiency of LED devices", https://doi.org/10.18150/9PRICW, RepOD, V1

Sn diffusion in GaN - DFT data

Apr 30, 2026

Kawka, Karol, 2026, "Sn diffusion in GaN - DFT data", https://doi.org/10.18150/XLEBHV, RepOD, V1

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