Search results
Feb 4, 2025
Drozd-Rzoska, Aleksandra; Rzoska, Sylwester Janusz; Szpakiewicz-Szatan, Aleksander; Starzonek, Szymon; Łoś, Joanna; Orzechowski, Kazimierz, 2025, "Supercritical anomalies in liquid ODIC-forming cyclooctanol under the strong electric field", https://doi.org/10.18150/MJUTDN, RepOD, V1 |
Jan 14, 2025
Hrytsak, Roman, 2025, "DFT Calculation Data on the Clusters of Vacancies in Gallium Nitride grown by MOCVD", https://doi.org/10.18150/9PUK4P, RepOD, V1 |
Dec 27, 2024
Singh, Shiv, 2024, "Copper doping effects on the superconducting properties of Sm-based oxypnictides", https://doi.org/10.18150/EGG6QI, RepOD, V1 |
Dec 18, 2024
Kempisty, Paweł, 2024, "DFT Calculation Data on the Electronic Properties of As-covered GaN(0001) Surfaces", https://doi.org/10.18150/7R3XKQ, RepOD, V1 |
Dec 10, 2024
Staszczak, Grzegorz, 2024, "Special role of indium nitride in the properties of related compounds and quantum structures", https://doi.org/10.18150/QIAQ3W, RepOD, V1 |
Oct 31, 2024
Szpakiewicz-Szatan, Aleksander; Starzonek, Szymon; Garbarczyk, Jerzy Edward; Pietrzak, Tomasz Karol; Boćkowski, Michał; Rzoska, Sylwester Janusz, 2024, "AC Electric Conductivity of High Pressure and High Temperature Formed NaFePO4 Glassy Nanocomposite", https://doi.org/10.18150/Y0RGGK, RepOD, V1 |
Oct 17, 2024
Singh, Shiv, 2024, "Fe(Se,Te) Thin Films Deposited through Pulsed Laser Ablation from Spark Plasma Sintered Targets", https://doi.org/10.18150/AGOXPW, RepOD, V1 |
Oct 11, 2024
Smalc-Koziorowska, Julita, 2024, "Research data for "Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN" published in Acta Materialia vol 276, 120082 (2024)", https://doi.org/10.18150/ZYX2FD, RepOD, V1 |
Sep 13, 2024
AKTAŞ, Muhammed; GRZANKA, Szymon; MARONA, Lucja; GOSS, Jakub; STASZCZAK, Grzegorz; KAFAR, Anna; PERLIN, Piotr, 2024, "Polarization - Doped InGaN LEDs and Laser Diodes for Broad Temperature Range Operation", https://doi.org/10.18150/H4KDNN, RepOD, V1 |
Sep 6, 2024
Jaroszyńska, Arianna, 2024, "On Morphology of Aluminum–Gallium Nitride Layers Grown by Halide Vapor Phase Epitaxy: The Role of Total Reactants’ Pressure and Ammonia Flow Rate", https://doi.org/10.18150/WFFI5C, RepOD, V1 |