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Kruszewski , Piotr; Sai, Pavlo; Krajewska, Aleksandra; Sakowski, Konrad; Ivonyak, Yurii; Jakieła, Rafał; Plesiewicz, Jerzy; Prystawko, Paweł, 2024, "Graphene Schottky barrier diode acting as a semi-transparent contact to n-GaN", https://doi.org/10.18150/XI2HKM, RepOD, V1
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The successful development of graphene Schottky barrier diodes (Gr SBDs) acting as an efficient semi-transparent contact to n-GaN has been demonstrated. Gr Schottky barrier diodes on n-GaN sample grown by the metal organic vapor phase (MOVPE) technique were fabricated and used in the measurements of steady-state photo-capacitance (SSPC) and deep level optical spectroscopy (DLOS), respectively. It is shown that SSPC and DLOS spectra obtained for Gr SBDs are in excellent agreement with Ni-based semi-transparent contacts to n-GaN used in this study for comparison. Additionally, the optical capture cross-section data (σ0) derived from DLOS were fitted using the Lucovsky model, under the assumption of no lattice relaxation for all deep traps observed in this study.
A set of raw experimental data that consists of:
Graphene, gallium nitride, deep traps, defects, Deep Level Optical Spectroscopy, Steady State Photo Capacitance, Schottky barrier
CC BY - Creative Commons Attribution 4.0
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