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Sochacki, Tomasz; Sadovyi, Petro, 2026, "EDS data for bulk AlxGa1-xN crystal A3402d2 grown by the basic ammonothermal method in the conventional configuration", https://doi.org/10.18150/QSTLPU, RepOD, V1
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The dataset contains energy-dispersive X-ray spectroscopy (EDS) data for the bulk AlxGa1-xN crystal A3402d2, grown by the basic ammonothermal method on a native ammonothermal GaN seed in the conventional (round-seed) configuration, with growth proceeding predominantly along the polar [000-1] direction.
In the related publication this is the conventionally grown c-plane AlxGa1-xN crystal characterized in Figures 2-4 (Al content 3.9 at. % by HR-XRD and 4.0-4.5 at. % by EDS). Area scans were acquired at three positions along the crystal radius, 0, 13 and 26 mm from the edge, and Al, Ga and N elemental maps were recorded at 26 mm. Each point file contains the SEM image of the measured area, the energy spectrum and the table of atom percentages calculated by the Bruker software. The Al content x was calculated as Al/(Al+Ga) from atom percentages and ranges from 0.040 at the edge to 0.046 in the central region. Aluminum content was measured using a Zeiss Ultra Plus SEM equipped with a Bruker Quantax400 EDS module at an accelerating voltage of 15 kV, a working distance of 9.7 mm and a magnification of 5000x (maps: 1000x). Detailed file descriptions are given in readme.txt.
Aluminum gallium nitride (AlGaN), Ammonothermal method, Bulk crystal growth, Gallium nitride (GaN), Energy Dispersive Spectroscopy (EDS), Elemental mapping
Robert Kucharski, Karolina Grabianska, Magdalena A. Zajac, Petro Sadovyi, Patrik Stranák, Lutz Kirste, Marouane Ammar, Nevine Rochat, Łukasz Borowik, Michal Bockowski, and Tomasz Sochacki, 2026, „First Bulk AlGaN Crystals Grown by the Basic Ammonothermal Method”, Crystal Growth & Design https://doi.org/10.1021/acs.cgd.6c00597 doi: 10.1021/acs.cgd.6c00597
CC BY - Creative Commons Attribution 4.0
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