This dataset contains the raw data used for the publication titled "Ultra-high pressure annealing of Mn-implanted HVPE-GaN". The following paragraphs contain: list of equipment used for data acquisition, abbreviations used in the article and the publication's abstract.
1) List of Equipment:
CAMECA IMS6F microanalyzer
Philips X′pert Pro diffractometer with an Empyrean Cu LFF HR (9430 033 7310x) DK33 source and a Xe proportional detector.
Custom-built Ultra-high Pressure reactor
2) Abbreviations:
Mn - Manganese
Si - Silicon
O - Oxygen
Er - Erbium
Eu - Europium
GaN - Gallium nitride
SiC - silicon carbide
HEMT - High Electron Mobility Transistor
SI - semi-insulating (i.e. exhibiting high resistivity)
UHPA - Ultra-high pressure annealing
HVPE - Halide Vapor Phase Epitaxy
SIMS - Secondary Ion Mass Spectrometry
XRD - X-ray diffraction/diffractometry
SRIM - Stopping and Range of Ions in Matter (software)
3) Abstract:
Manganese diffusion in ion implanted gallium nitride crystals was investigated. The ions were implanted into a sample composed of a GaN layer grown using halide vapor phase epitaxy on an ammonothermal gallium nitride substrate. The sample was polished into an atomically flat state prior to the implantation. Manganese ions were implanted into the surface of a (0001) plane (also known as the c-plane) using the beam energy of 230 keV and ion fluence of 5E15 cm 2. The beam was tilted relative to the sample’s normal to prevent channeling. After the implantation, ultra-high pressure annealing method was used to both, remove the post-implantation damage and induce the diffusion of implanted Mn ions. Manganese profiles were analyzed along the c-direction using sec- ondary ion mass spectrometry after 5 and 30 h of annealing in temperatures ranging from 1473 K to 1753 K. Two diffusion mechanisms were observed. The diffusion parameters, activation energy and temperature-independent diffusion coefficients, are presented for each mechanism. Additionally, the structural quality of the samples is assessed after 5 and 30-hour annealing in the aforementioned temperature range through the means of X-ray diffractometry.
