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Boćkowski, Michał, 2026, "Ultra-High-Pressure Annealing Data for Si/Mg/Mg+N-ion-implanted GaN for photoluminescence characterisation", https://doi.org/10.18150/MBEOQH, RepOD, V1
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The paper analyzes the impact of ultra-high-pressure nitrogen annealing (UHPA) on undoped and ion-implanted GaN using steady-state and time-resolved photoluminescence. The authors studied Si-, Mg-, and sequentially Mg/N-implanted samples. In undoped GaN, a higher UHPA temperature shortened the near-band-edge emission lifetimes, indicating an increased number of midgap recombination centers. In ion-implanted GaN, the opposite effect was observed: a higher temperature reduced vacancy-type defects and promoted dopant activation, especially acceptors. The files contain measurements of four temperatures and pressure as a function of time. The JPG file shows the annealing configuration: a crucible with samples and the positions of the thermocouples from which the temperature measurements were collected. For detailed description please consult readme txt file.
Ultra-High-Pressure Annealing, Magnesium, Silicon, Nitrogen, Ion implantation, Co-implantation, Photoluminescence, Gallium Nitride
Kohei Shima, Tetsuo Narita, Akira Uedono, Michal Bockowski, Jun Suda, Tetsu Kachi, and Shigefusa Chichibu, 2025, "Impacts of ultra-high-pressure annealing on undoped and ion-implanted GaN studied by photoluminescence measurements", Journal of Applied Physics, Volume 137, Issue 23, 235702 https://doi.org/10.1063/5.0266700 doi: doi: 10.1063/5.0266700
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