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Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN

Version 1.0

Sochacki, Tomasz, 2024, "Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN", https://doi.org/10.18150/9DO5PZ, RepOD, V1

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Description

This dataset contains the image data used for the publication titled " Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN". The following paragraphs contain: list of equipment used for data acquisition, abbreviations used in the article and the publication's abstract.


1) List of Equipment:

HVPE reactor

Nikon Eclipse LV100ND optical microscope

300 W UV-enhanced Xe lamp

Photoetching equipment

Tencore Alfa step profiler


2) Abbreviations:

GaN - Gallium nitride

HVPE - Halide Vapor Phase Epitaxy

Am-GaN - Ammonothermal GaN (i.e. GaN grown using ammonothermal method)

HVPE-GaN - Halide Vapor Phase Epitaxy GaN (GaN grown using the Halide Vapor Phase Epitaxy method)

XRT - X-ray topography

OM - Optical Microscope

VIS light - visible light

UV light - ultraviolet light

PE - Photoetching

KSO-D solution - Solution consisted of K2S2O8 and KOH chemical compounds


3) Abstract:

A detailed analysis of morphology of gallium nitride crystal growth obtained by ammonothermal and halide vapor phase epitaxy methods was carried out. The work was conducted to determine the source of triangular planar defects visible in X-ray topography as areas with locally different lattice parameters. It is shown that the occurrence of these defects is related to growth hillocks. Particular attention was paid to analyzing the manner and consequences of merging hillocks. In the course of the study, the nature of the mentioned defects and the cause of their formation were determined. It was established that the appearance of the defects depends on the angle formed between the steps located on the sides of two adjacent hillocks. A universal growth model is presented to explain the cause of heterogeneity during the merging of growth hillocks.

(2023)
Subject
Engineering; Physics
Keyword

GaN, crystal growth, basic ammonothermal method, halide vapor phase epitaxy, growth morphology, growth model

CC BY - Creative Commons Attribution 4.0 CC BY - Creative Commons Attribution 4.0

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F1a.jpg
JPEG Image - 113.4 KB - Jan 4, 2024 - 0 Downloads
MD5: 60efd0f8616db3ce719b382a67dbaad8
License: CC BY - Creative Commons Attribution 4.0
X-ray topography of 1-inch Am-GaN n-type substrate performed in transmission mode.
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F1b.jpg
JPEG Image - 100.8 KB - Jan 4, 2024 - 1 Download
MD5: fd8df60ad66b8f1497b45fff9c6aa4ea
License: CC BY - Creative Commons Attribution 4.0
X-ray topography of 1-inch Am-GaN n-type substrate performed in transmission mode.
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F2.jpg
JPEG Image - 269.7 KB - Jan 4, 2024 - 0 Downloads
MD5: 082bcc3e79fdec06b7792cf6ca36b030
License: CC BY - Creative Commons Attribution 4.0
Morphology of 2-inch as-grown Am-GaN crystal.
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F3a.jpg
JPEG Image - 3.8 MB - Jan 4, 2024 - 0 Downloads
MD5: a2aa5b7db9870080892118b0cc92e59f
License: CC BY - Creative Commons Attribution 4.0
Optical microscope Images of the growth morphology of Am-GaN crystal.
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F3b.jpg
JPEG Image - 3.5 MB - Jan 4, 2024 - 0 Downloads
MD5: c98bdda81a102f02ddfc29fcc5224dfd
License: CC BY - Creative Commons Attribution 4.0
Optical microscope images of the growth morphology of Am-GaN crystal.
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F4a.jpg
JPEG Image - 906.1 KB - Jan 4, 2024 - 0 Downloads
MD5: e123b36211db7e2a549a1e64175540a1
License: CC BY - Creative Commons Attribution 4.0
Optical microscope images of the growth morphology of Am-GaN crystal.
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F4b.jpg
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MD5: f4548e595baab0056bce558b26443fe1
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Optical microscope images of Am-GaN crystal performed under UV light.
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F4c.jpg
JPEG Image - 465.4 KB - Jan 4, 2024 - 0 Downloads
MD5: fd7252d8022c10fbed3697efea4100e5
License: CC BY - Creative Commons Attribution 4.0
Optical microscope images of the growth morphology of Am-GaN crystal.
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F4d.jpg
JPEG Image - 131.7 KB - Jan 4, 2024 - 0 Downloads
MD5: d412b6ae1f6ae9d81b48ae21384f8c92
License: CC BY - Creative Commons Attribution 4.0
Optical microscope images of Am-GaN crystal performed under UV light.
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F5.jpg
JPEG Image - 860.0 KB - Jan 4, 2024 - 0 Downloads
MD5: 09474af0f7d33f1844b74beea42bc713
License: CC BY - Creative Commons Attribution 4.0
Morphology of 1-inch as-grown HVPE-GaN crystal.
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