This is a set of research data related to the article titled: "Potential of Graphene/AlGaN/GaN heterostructures to study the drag and two-stream instability effects" A. Rehman, D.B. But, P. Sai, M. Dub, P. Prystawko, A. Krajewska, G. Cywinski, W. Knap, S. Rumyantsev.
README.txt file contains detailed description of all dataset attached
Submittend to: AIP Advance.
The set contains numerical data used to create the next Figures:
Figure 2 (a) Output current-voltage characteristics of AlGaN/GaN transistor with graphene serving as a gate. (b) Transfer current-voltage characteristics of the graphene transistor with 2DEG serving as the gate.
Figure 3. (a) Graphene drag current at two temperatures as a function of the drive voltage applied to the 2DEG (drain of the AlGaN/GaN transistor). (b) The same as in panel (a), but for a wider drive voltage range and at higher temperatures as well. Dashed line shows the leakage current between conducting layers at T=10 K.
Fig. 4 (a) Ratio of the drag to drive currents as a function of temperature. (b) Drag resistance at different temperatures as a function of the drive current. (c) Output current-voltage characteristics of AlGaN/GaN transistor at different temperatures.
(2026-01-27)