Institute of High Pressure Physics

Boćkowski, Michał, 2026, "Ultra-High-Pressure Annealing Data for Si/Mg/Mg+N-ion-implanted GaN for photoluminescence characterisation", https://doi.org/10.18150/MBEOQH, RepOD, V1

Boćkowski, Michał, 2026, "Ultra-High-Pressure Annealing Data for Mg-ion-implanted GaN with carbon capping", https://doi.org/10.18150/RO6VRA, RepOD, V1

Kawka, Karol, 2026, "First-principles data for silicon diffusion in GaN", https://doi.org/10.18150/KKUNGQ, RepOD, V2

Smalc-Koziorowska, Julita, 2026, "Research data for studies of edge relaxation of InGaN layers", https://doi.org/10.18150/X3FXSH, RepOD, V1

Lach, Szymon, 2026, "Estimation of light extraction efficiency of LED devices", https://doi.org/10.18150/9PRICW, RepOD, V1

Kawka, Karol, 2026, "Sn diffusion in GaN - DFT data", https://doi.org/10.18150/XLEBHV, RepOD, V1

Sochacki, Tomasz, 2026, "The influence of hydrogen admixture in the carrier gas on aluminum gallium nitride growth in halide vapor phase epitaxy", https://doi.org/10.18150/SC1SCV, RepOD, V1

Sierakowski, Kacper; Kawka, Karol, 2026, "Germanium ion implantation into gallium nitride", https://doi.org/10.18150/SI2JQO, RepOD, V1

Moneta, Joanna, 2026, "TEM microscopy study of misfit dislocations in InGaN/GaN interface", https://doi.org/10.18150/X29468, RepOD, V1

Grabiańska, Karolina; Kucharski, Robert; Kempisty, Paweł; Sochacki, Tomasz; Boćkowski, Michał, 2026, "Thermodynamic analysis of GaN solubility in supercritical ammonia", https://doi.org/10.18150/5EZAT8, RepOD, V1