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Thumbnail of dataset On Morphology of Aluminum–Gallium Nitride Layers Grown by Halide Vapor Phase Epitaxy: The Role of Total Reactants’ Pressure and Ammonia Flow Rate
DatasetOn Morphology of Aluminum–Gallium Nitride Layers Grown by Halide Vapor Phase Epitaxy: The Role of Total Reactants’ Pressure and Ammonia Flow Rate
Sep 6, 2024

Jaroszyńska, Arianna, 2024, "On Morphology of Aluminum–Gallium Nitride Layers Grown by Halide Vapor Phase Epitaxy: The Role of Total Reactants’ Pressure and Ammonia Flow Rate", https://doi.org/10.18150/WFFI5C, RepOD, V1

DatasetEvolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN
Jan 4, 2024

Sochacki, Tomasz, 2024, "Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN", https://doi.org/10.18150/9DO5PZ, RepOD, V1

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