Institute of High Pressure Physics

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Author Name: Turski, Henryk

1 to 4 of 4 Results

DatasetElectrical and optical characteristics for the ultra-thin InGaN LED obtained before and after transfer Apr 4, 2025 Chlipała, Mikołaj; Akritidis, Konstantinos; Iryna Levchenko; Gibasiewicz, Krzysztof; Brstilo, Tara; Billet, Maximilien; Van Dorpe, Pol; Fiuczek, Natalia; Sawicka, Marta; Kuyken, Bart; Turski, Henryk, 2025, "Electrical and optical characteristics for the ultra-thin InGaN LED obtained before and after transfer", https://doi.org/10.18150/KGI4NU, RepOD, V1
DatasetUsing both faces of polar semiconductor wafers for functional devices-data set Oct 11, 2024 Turski, Henryk, 2024, "Using both faces of polar semiconductor wafers for functional devices-data set", https://doi.org/10.18150/US6STK, RepOD, V1
DatasetCompetition between built-in polarization and p–n junction field in III-nitride heterostructures-data set Jul 15, 2024 Turski, Henryk; Chlipala, Mikolaj; Zdanowicz, Ewelina; Rogowicz, Ernest; Muziol, Grzegorz; Moneta, Joanna; Grzanka, Szymon; Krysko, Marcin; Syperek, Marcin; Kudrawiec, Robert; Skierbiszewski, Czeslaw, 2024, "Competition between built-in polarization and p–n junction field in III-nitride heterostructures-data set", https://doi.org/10.18150/034OCE, RepOD, V1
DatasetRole of Metallic Adlayer in Limiting Ge Incorporation into GaN - dataset Jun 28, 2023 - DataverseRepOD Turski, Henryk; Wolny, Pawel; Chlipala, Mikolaj; Sawicka, Marta; Reszka, Anna; Kempisty, Pawel; Konczewicz, Leszek; Muziol, Grzegorz; Siekacz, Marcin; Skierbiszewski, Czeslaw, 2023, "Role of Metallic Adlayer in Limiting Ge Incorporation into GaN - dataset", https://doi.org/10.18150/SQT89Z, RepOD, V1

Electrical and optical characteristics for the ultra-thin InGaN LED obtained before and after transfer

Apr 4, 2025

Chlipała, Mikołaj; Akritidis, Konstantinos; Iryna Levchenko; Gibasiewicz, Krzysztof; Brstilo, Tara; Billet, Maximilien; Van Dorpe, Pol; Fiuczek, Natalia; Sawicka, Marta; Kuyken, Bart; Turski, Henryk, 2025, "Electrical and optical characteristics for the ultra-thin InGaN LED obtained before and after transfer", https://doi.org/10.18150/KGI4NU, RepOD, V1

Using both faces of polar semiconductor wafers for functional devices-data set

Oct 11, 2024

Turski, Henryk, 2024, "Using both faces of polar semiconductor wafers for functional devices-data set", https://doi.org/10.18150/US6STK, RepOD, V1

Competition between built-in polarization and p–n junction field in III-nitride heterostructures-data set

Jul 15, 2024

Turski, Henryk; Chlipala, Mikolaj; Zdanowicz, Ewelina; Rogowicz, Ernest; Muziol, Grzegorz; Moneta, Joanna; Grzanka, Szymon; Krysko, Marcin; Syperek, Marcin; Kudrawiec, Robert; Skierbiszewski, Czeslaw, 2024, "Competition between built-in polarization and p–n junction field in III-nitride heterostructures-data set", https://doi.org/10.18150/034OCE, RepOD, V1

Role of Metallic Adlayer in Limiting Ge Incorporation into GaN - dataset

Jun 28, 2023 - RepOD

Turski, Henryk; Wolny, Pawel; Chlipala, Mikolaj; Sawicka, Marta; Reszka, Anna; Kempisty, Pawel; Konczewicz, Leszek; Muziol, Grzegorz; Siekacz, Marcin; Skierbiszewski, Czeslaw, 2023, "Role of Metallic Adlayer in Limiting Ge Incorporation into GaN - dataset", https://doi.org/10.18150/SQT89Z, RepOD, V1

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