RepOD

This is a set of research data related to article "Role of Metallic Adlayer in Limiting Ge Incorporation into GaN"; Materials 2022, 15(17), 5929. The set contains numerical data used to create Figures 1-4 and AFM images of Figure 6.

Figure 1. Germanium concentration measured by SIMS as a function of depth for a stack of InGaN:Ge and GaN:Ge layers separated by layers of the same composition that were intentionally undoped.

Figure 2. Germanium concentration measured by SIMS (linear scale) as a function of depth for a stack of InGaN:Ge and GaN:Ge layers separated by intentionally undoped layers. Optimized atomic structures of GaN(0001) surface: clean and with Ga and In adlayers (XCrySDen Structure File). The positions were obtained as a result of DFT (Density Funtional Theory) calculations using the SIESTA program.

Figure 3. Plane-view SEM image of the surface of 500 nm-thick GaN:Ge layer and a corresponding energy-dispersive X-ray spectroscopy (EDX) mapping of Ge Kα1 transition.

Figure 4. Germanium concentration measured by SIMS as a function of depth for a stack of InGaN:Ge and GaN:Ge layers separated by layers of the same composition that were intentionally undoped or doped with silicon.

Figure 6. InGaN:Ge surface images obtained by AFM for 30 nm-thick layers with Ge concentration tuned between 7×10^19 atoms/cm3 and 5×10^20 atoms/cm3.