The following data contains figure data, raw measurement results and SEM images from the publication entitled: "Annealing-free fabrication of high-quality indium tin oxide films for free-carrier-based hybrid metal–semiconductor nanophotonics" (https://doi.org/10.1038/s41598-023-45651-w) and are organized according to the order of the figures appearing in the article.
In the publication we present a comprehensive study on the low‑temperature deposition of 70 nm thick ITO films using an e‑beam PVD system. The nanolayers evaporated under different conditions were characterized by SEM and AFM microscopy, Hall effect measurement system as well as spectroscopic ellipsometry. We discuss the factors influencing the optical, electrical, and morphological properties of ITO films. We show that smooth nanolayers of similar quality to annealed samples can be obtained at 80 °C by controlling the oxygen plasma parameters, and the ENZ wavelength can be tuned throughout the NIR spectral range. Finally, we show that using the proposed methodology, we fabricated ITO films with resistivity as low as 5.2 × 10–4 Ω cm, smooth surface with RMS < 1 nm, high carrier concentration reaching 1.2 × 1021 cm−3 and high transmittance (85%) in the Vis/NIR spectrum.
Fig1a-b - ITO resistivity, carrier concentration and mobility as a function of substrate temperature.
Fig1c - SEM image of sample morphology without any oxygen.
Fig1d - Resistivity as a function of deposition rate.
Fig2a-b - ITO resistivity, carrier concentration and mobility as a function of oxygen flow.
Fig2c and Fig 2d - SEM images of sample morphology with 2 sccm and 8 sccm oxygen flow.
Fig3a-b - ITO resistivity, carrier concentration and mobility as a function of plasma discharge voltage.
Fig4a to Fig 4e - SEM images of sample morphology with various plasma discharge voltage.
Fig4f - RMS as a function of plasma discharge voltage.
Fig5a-b - ITO resistivity, carrier concentration and mobility as a function of plasma discharge current.
Fig6a to Fig6g - SEM images of sample morphology with various plasma discharge current.
Fig6h - RMS as a function of plasma discharge current.
Fig8a - ITO electric permittivity dispersion with various plasma discharge voltage.
Fig8b - ITO electric permittivity dispersion with various plasma discharge current.
Fig9a - ITO transmittance with various plasma discharge voltage.
Fig9b - ITO transmittance with various plasma discharge current.
Fig10a - ENZ wavelength of ITO in a function of plasma discharge voltage.
Fig10b - Plasma frequency of ITO in a function of plasma discharge voltage.
Fig11a - ENZ wavelength of ITO in a function of plasma discharge current.
Fig11b - Plasma frequency of ITO in a function of plasma discharge current.
Ellipsometry_data.zip - contains raw data from spectroscopic ellipsometry measurements in .dat format.
