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Experimental data on graphitic carbon nitride-mediated epitaxy of hexagonal boron nitride on sapphire

Version 1.0

Iwański, Jakub, 2026, "Experimental data on graphitic carbon nitride-mediated epitaxy of hexagonal boron nitride on sapphire", https://doi.org/10.18150/IEQQFC, RepOD, V1

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Description

Summary of the research

Epitaxial growth of hexagonal boron nitride (hBN) on sapphire is of fundamental importance for the development of van der Waals heterostructures, yet the mechanism of crystallographic alignment across a weakly bonded interface remains unresolved. Here, we demonstrate that graphitic carbon nitride (g-C3N4), unintentionally formed during Metal-Organic Vapor Phase Epitaxy (MOVPE) from triethylboron and ammonia precursors, plays a pivotal role in transferring lattice orientation from the Al2O3 substrate to the overgrown hBN film. High-resolution transmission electron microscopy, electron energy loss spectroscopy, X-ray diffraction, photoluminescence, and X-ray photoelectron spectroscopy consistently reveal a nanometer-thick interfacial region composed of AlN:O and g-C3N4. Despite its partial amorphization upon post-growth cooling, the layered structure of g-C3N4 provides the necessary structural flexibility to accommodate lattice mismatch and transmit crystallographic information across the interface. This finding establishes g-C3N4 as an effective buffer enabling epitaxial growth of two-dimensional hBN on a three-dimensional substrate. These insights suggest that the presence of carbon at the growth interface, often regarded as detrimental, can in fact be critical for achieving wafer-scale, high-quality epitaxial hBN, opening new directions for interface engineering in 2D material synthesis.

Subject
Physics
Keyword

hexagonal boron nitride (hBN), Metal-Organic Vapor Phase Epitaxy (MOVPE), graphitic carbon nitride (g-C3N4), interfacial interactions, 2D materials, epitaxy

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Figure3b.txt
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Wide-range X-ray diffraction (XRD) 2θ/ω scan, showing the (0002) peak of hBN at ~26.7°, the (0002) peak of AlN:O at ~36.0°, and the (0006) peak of Al2O3 at ~41.7°. First column is angular position (in deg) and second column is signal intensity (in cps).
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Figure4g.txt
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2θ/ω XRD scans for the as-grown hBN20nm sample (columns 7-8), the same sample after delamination and transfer onto a new bare Al2O3 substrate (columns 3-4), the remaining substrate after hBN delamination (columns 5-6) and bare Al2O3 as a reference (columns 1-2). Columns 1, 3, 5, 7 are 2θ angular position (in deg) and columns 2, 4, 6, 8 are signal intensities (in cps).
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Figure4h.txt
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Photoluminescence spectra of reference g-C3N4 powder (columns 4-5), the substrate after hBN20nm delamination (columns 1,3), and the difference spectrum for hBN6nm and hBN14nm (columns 1-2). The peak at 384 nm is related to the residual laser signal while the peak at 694 nm corresponds to Cr3+ transition in the sapphire substrate. Columns 1, 4 are wavelength in nm and columns 2-3, 5 are signal intensity in arb. u.
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Figure4i.txt
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High-resolution XPS spectra of the substrate after hBN20nm delamination, focusing on C-related (C 1s) and N-related (N 1s) peaks. Description of columns: 1: Binding energy in eV 2: Intensity of N 1s signal (raw data) 3: Intensity of N 1s component - Al-N (model) 4: Intensity of N 1s component - N-O (model) 5: Intensity of N 1s component - N-Al-O (model) 6: Intensity of N 1s component - C-N=C (model) 7: Intensity of N 1s component - N-C3 (model) 8: Intensity of N 1s component - C-NHx (model) 9: Intensity of N 1s component - background (model) 10: Intensity of N 1s sum of all components (model)
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