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PAMBE growth of GaN nanowires on metallic ZrN buffers - a critical impact of ZrN layer thickness on the growth temperature

Version 2.0

Sobańska, Marta, 2025, "PAMBE growth of GaN nanowires on metallic ZrN buffers - a critical impact of ZrN layer thickness on the growth temperature", https://doi.org/10.18150/HYOSCB, RepOD, V2

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Description

The result contained in this repository describe a temperature calibration technique for molecular beam epitaxy (MBE) and its application in controlled growth of GaN nanowires (NWs) on different substrates. We demonstrate that by controlled melting of aluminum wires bonded to the substrates surface, observed on the RHEED screen, it is possible to determine emissivity of the sample. By utilizing this approach we show that a thin buffer layer deposited on a substrate may have a drastic influence on its emissivity. Using bulk emissivity value and disregarding the influence of the thin film may lead to significant errors in temperature measurements during the growth process. To demonstrate significance of this effect we grow GaN NWs on Si substrates with and without additional ZrN nucleation layer and obtain arrays starkly different in both length and density of the nanowires. As the final test, we showed that by using our temperature calibration procedure identical GaN nanowire arrays can be grown on two Si substrates with and without ZrN layers.


A description of the results can be found in the file "readme.txt".

(2025-02-11)
Subject
Physics
Keyword

molecular beam epitaxy, temperature calibration, optical pyrometry, GaN nanowires, metallic substrates, thin layer emissivity

CC0 Creative Commons Zero 1.0 CC0 Creative Commons Zero 1.0

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readmme.txt
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License: CC0 Creative Commons Zero 1.0
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Figure 1.png
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(a) Post growth photo of 3” Si(111) wafer with one half covered by 40 nm ZrN layer. GaN NWs were grown on the whole substrate area, (b) and (c) Cross-section SEM images of GaN NWs grown on the SiN(2)/SiN(1)/Si half and on the SiN(2)/ZrN/Si half of the substrate, respectively. Schematical drawings of the structures are shown above each SEM image.
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Figure 2.png
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(a) Geometry of the system used for observation of melting of Al wires, (b) Photograph of a substrate wafer with Al wires bonded to its surface, (c) RHEED screen image showing shadows of 5 separate Al wires attached to the substrate.
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Figure 3.png
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Dependence of substrate emissivity on the ZrN film thickness deposited on silicon (red) and sapphire (blue) substrates measured at T = 660oC and for wavelength λ = 1.6 μm. The lines are drawn to guide the eye.
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Cross-section (a,b) and top view (c,d) SEM images of two GaN NW arrays that were grown at the same temperature of 838°C but on different substrates: SiN(2)/SiN(1)/Si (green frame) and SiN(2)/ZrN/Si(1)/Si (red frame).
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X-ray diffraction 10-12 pole figures of GaN NWs grown on (a) SiN(2)/SiN(1)/Si and (b) SiN(2)/ZrN/SiN(1)/Si substrates at the same growth conditions. Three peak at χ=34o originate from Si 220 reflection while those at χ=42o come from GaN 10-12 reflection.
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