Files include the data presented in the manuscript entitled: "Engineering of Interface Barrier in Hybrid MXene/GaN Heterostructures for Schottky Diode Applications" by D. Majchrzak et al. (https://doi.org/10.1021/acsami.4c13225)
Figure 1. (a) General scheme of the MXene/GaN van Hoof structure. (b) Room temperature CER spectra of reference GaN (gray dashed-dot lines) and V2C/GaN van Hoof structures (orange solid lines) with 40, 60, 80 and 100 nm thick cap layers and (c) corresponding analysis of the built-in electric field for reference GaN and V2C/GaN structures with different thickness of GaN cap layers. (d) Calculation of the surface barrier height for both GaN and V2C/GaN structures together with the fitting curves. Determined values of the built-in electric field and surface barrier height are given in the legends.
Figure 2. (a) Room temperature CER spectra of reference GaN and different MXene/GaN van Hoof structures with 40 nm thick cap layer. (b) Corresponding analysis of the built-in electric field and (c) calculation of the surface barrier height with the fitting curves for both reference GaN and different MXene/GaN structures. Determined values of the built-in electric field and surface barrier height are given in the legends.
Figure 3. (a) UPS spectra relative to the vacuum level, measured using He I photons (hν = 21.2 eV), and (b) band alignment diagram for all studied MXene/GaN van Hoof structures. Abbreviations: VL - vacuum level, CB - conduction band, VB - valence band.
Figure 4. XPS spectra for (a) V-2p, (b) C-1s and (c) O-1s core level lines for not annealed and annealed at 750 °C V2C/GaN van Hoof structures.
Figure 5. Summary of (a) barrier heights derived from CER measurements and (b) ionization energies from UPS analysis for all examined MXene/GaN samples, both before and after annealing at 750 °C.
Figure 6. (a) Room temperature CER spectra, (b) analysis of the built-in electric field, and (c) corresponding SEM images for reference GaN and V2C/GaN van Hoof structures with 40 nm thick cap layer. “After cleaning” refers to V2C/GaN van Hoof structure after acetone treatment and wiping of the surface. Extracted values of the built-in electric field are given in the legend.
Figure 7. (a) MXene/GaN Schottky diode structure scheme, (b) room temperature I–V characteristics of reference GaN as well as Mo2C/GaN and V2C/GaN Schottky diodes. The inset shows a magnified view of the forward voltage region.
Data was calculated using OriginLab software and in case of XPS spectra using CasaXPS software.
